• FQT4N25TF
  • FQT4N25TF
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

polarityN-Channel
voltage_rating_dc250 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current830 mA
breakdown_voltage_drain_to_source250 V
vds_drain_to_source_voltage250 V
current_rating830 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape
case_packageSOT-223
rds_drain_to_source_resistance_on1.75 Ω
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation2.50 W
Transistor PolarityN Channel
Continuous Drain Current Id830mA
Drain Source Voltage Vds250V
On Resistance Rds(on)1.38ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd2.5W
Transistor Case StyleSOT-223
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
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