• FQT5P10TF
  • FQT5P10TF
  • FQT5P10TF
  • FQT5P10TF
  • FQT5P10TF
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This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

polarityP-Channel
input_capacitance250 pF
voltage_rating_dc-100 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current-1.00 A, 1.00 mA
gate_charge8.20 nC
power_dissipation2.00 W
vds_drain_to_source_voltage100 V, -100 V
current_rating-1.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-223
rds_drain_to_source_resistance_on1.05 Ω
lifecycle_statusActive
rohs_statusCompliant
pin_count3
Transistor PolarityP Channel
Continuous Drain Current Id-1A
Drain Source Voltage Vds-100V
On Resistance Rds(on)820mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-4V
Power Dissipation Pd2W
Transistor Case StyleSOT-223
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
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