• FQT7N10LTF
  • FQT7N10LTF
  • FQT7N10LTF
  • FQT7N10LTF
  • FQT7N10LTF
  • FQT7N10LTF
  • FQT7N10LTF
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

polarityN-Channel
input_capacitance220 pF
voltage_rating_dc100 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current1.70 A, 1.70 mA
gate_charge4.60 nC
breakdown_voltage_drain_to_source100 V
vds_drain_to_source_voltage100 V
current_rating1.70 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
case_packageSOT-223
rds_drain_to_source_resistance_on350 mΩ
rise_time100 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count4
power_dissipation2.00 W
Transistor PolarityN Channel
Continuous Drain Current Id1.7A
Drain Source Voltage Vds100V
On Resistance Rds(on)275mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2V
Power Dissipation Pd2W
Transistor Case StyleSOT-223
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingTape & Reel
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