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IGBT, POW, QUAD W NTC, 1200V, 200A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:1kW
| Transistor Polarity | N Channel |
| DC Collector Current | 200A |
| Collector Emitter Saturation Voltage Vce(on) | 1.75V |
| Power Dissipation Pd | 1kW |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 20Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (12-Jan-2017) |
| Module Configuration | Six |
| Operating Temperature Min | -40°C |
| Operating Temperature Range | -40°C to +150°C |
| Power Dissipation Max | 1kW |
| polarity | N-Channel |
| pin_count | 20 |
| reach_svhc_compliance | No SVHC |
| rohs_status | Compliant |
| mounting_style | Screw |
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