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IGBT, 1200V, TO-3P(LH); Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Current Ic Continuous a Max:25A; Fall Time Typ:160ns; Package / Case:TO-3P (LH); Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:50A; Rise Time:100ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
| DC Collector Current | 25A |
| Collector Emitter Saturation Voltage Vce(on) | 2.7V |
| Power Dissipation Pd | 200W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | TO-3P |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| Current Ic Continuous a Max | 25A |
| Fall Time Typ | 160ns |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Power Dissipation Max | 200W |
| Pulsed Current Icm | 50A |
| Rise Time | 100ns |
| Termination Type | Through Hole |
| Transistor Polarity | N Channel |
| Transistor Type | IGBT |
| Voltage Vces | 1.2kV |
| polarity | N-Channel |
| power_dissipation | 200 W |
| reach_svhc_compliance | No SVHC |
| rise_time | 100 ns |
| mounting_style | Through Hole |
| rohs_status | Compliant |
| pin_count | 3 |
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