• GT25Q102
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IGBT, 1200V, TO-3P(LH); Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Current Ic Continuous a Max:25A; Fall Time Typ:160ns; Package / Case:TO-3P (LH); Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:50A; Rise Time:100ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

DC Collector Current25A
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Ic Continuous a Max25A
Fall Time Typ160ns
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max200W
Pulsed Current Icm50A
Rise Time100ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces1.2kV
polarityN-Channel
power_dissipation200 W
reach_svhc_complianceNo SVHC
rise_time100 ns
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
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