• GT30J324
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IGBT, 600V, TO-3P(N); Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.45V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Current Ic Continuous a Max:30A; Fall Time Typ:50ns; Junction Temperature Tj Max:150°C; Junction to Case Thermal Resistance A:0.735°C/W; Package / Case:TO-3P (N); Power Dissipation Max:170W; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulsed Current Icm:60A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

polarityN-Channel
rohs_statusCompliant
rise_time70.0 ns
mounting_styleThrough Hole
pin_count3
power_dissipation170 W
DC Collector Current30A
Collector Emitter Saturation Voltage Vce(on)2.45V
Power Dissipation Pd170W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic Continuous a Max30A
Fall Time Typ50ns
Junction Temperature Tj Max150°C
Junction to Case Thermal Resistance A0.735°C/W
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max170W
Pulsed Current Icm60A
Rise Time70ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
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