• GT50J102
Срок поставки и цена – по запросу

IGBT, 600V, TO-3P(LH); Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Current Ic Continuous a Max:50A; Fall Time Typ:150ns; Package / Case:TO-3P (LH); Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:100A; Rise Time:120ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Ic Continuous a Max50A
Fall Time Typ150ns
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max200W
Pulsed Current Icm100A
Rise Time120ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
polarityN-Channel
rohs_statusCompliant
rise_time120 ns
mounting_styleThrough Hole
pin_count3
power_dissipation200 W
Показать остальные свойства..

    Ранее просмотренные товары