• GT50J325
Срок доставки – по запросу
1 982,75 ₽
от 1 шт.
1 895,82 ₽
от 2 шт.
1 814,11 ₽
от 3 шт.
1 750,57 ₽
от 4 шт.
1 691,69 ₽
от 5 шт.
итого  1 982,75 ₽
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

IGBT, 600V, TO-3P(LH); Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.45V; Power Dissipation Pd:240W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Current Ic Continuous a Max:50A; Fall Time Typ:50ns; Junction Temperature Tj Max:150°C; Junction to Case Thermal Resistance A:0.521°C/W; Package / Case:TO-3P (LH); Power Dissipation Max:240W; Power Dissipation Pd:240W; Power Dissipation Pd:240W; Pulsed Current Icm:100A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

polarityN-Channel
rohs_statusCompliant
rise_time70.0 ns
mounting_styleThrough Hole
pin_count3
power_dissipation240 W
DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.45V
Power Dissipation Pd240W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic Continuous a Max50A
Fall Time Typ50ns
Junction Temperature Tj Max150°C
Junction to Case Thermal Resistance A0.521°C/W
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max240W
Pulsed Current Icm100A
Rise Time70ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
rkg3 3 1
datasheet/upload/datasheet/2/1/GT50J325_datasheet_en_20061101.pdf
photo_url/upload/items/2020/07/16/Photo/199544.JPG
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