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IGBT, 600V, TO-3P(LH); Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.45V; Power Dissipation Pd:240W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Current Ic Continuous a Max:50A; Fall Time Typ:50ns; Junction Temperature Tj Max:150°C; Junction to Case Thermal Resistance A:0.521°C/W; Package / Case:TO-3P (LH); Power Dissipation Max:240W; Power Dissipation Pd:240W; Power Dissipation Pd:240W; Pulsed Current Icm:100A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
polarity | N-Channel |
rohs_status | Compliant |
rise_time | 70.0 ns |
mounting_style | Through Hole |
pin_count | 3 |
power_dissipation | 240 W |
DC Collector Current | 50A |
Collector Emitter Saturation Voltage Vce(on) | 2.45V |
Power Dissipation Pd | 240W |
Collector Emitter Voltage V(br)ceo | 600V |
Transistor Case Style | TO-3P |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | - |
SVHC | No SVHC (15-Jun-2015) |
Current Ic Continuous a Max | 50A |
Fall Time Typ | 50ns |
Junction Temperature Tj Max | 150°C |
Junction to Case Thermal Resistance A | 0.521°C/W |
Operating Temperature Min | -55°C |
Operating Temperature Range | -55°C to +150°C |
Power Dissipation Max | 240W |
Pulsed Current Icm | 100A |
Rise Time | 70ns |
Termination Type | Through Hole |
Transistor Polarity | N Channel |
Transistor Type | IGBT |
Voltage Vces | 600V |
rkg | 3 3 1 |
datasheet | https://cdn.promelec.ru/upload/datasheet/2/1/GT50J325_datasheet_en_20061101.pdf |
photo_url | https://cdn.promelec.ru/upload/items/2020/07/16/Photo/199544.JPG |