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The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
| Количество в упаковке | 30 |
| Корпус | TO-247 |
| Вес | 7.007 г |
| breakdown_voltage_collector_to_emitter | 600 V |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| voltage_rating_dc | 600 V |
| rise_time | 25.0 ns |
| mounting_style | Through Hole |
| packaging | Tube |
| case_package | TO-247 |
| lifecycle_status | Not Recommended for New Designs |
| rohs_status | Compliant |
| pin_count | 3 |
| power_dissipation | 208 W |
| current_rating | 60.0 A |
| DC Collector Current | 60A |
| Collector Emitter Saturation Voltage Vce(on) | 1.9V |
| Power Dissipation Pd | 208W |
| Collector Emitter Voltage V(br)ceo | 600V |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (15-Jun-2015) |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Power Dissipation Max | 208W |
| Transistor Type | IGBT |
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