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The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.
| polarity | NPN |
| breakdown_voltage_collector_to_emitter | 600 V |
| voltage_rating_dc | 600 V |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| rise_time | 45.0 ns |
| mounting_style | Through Hole |
| packaging | Tube |
| case_package | TO-247 |
| lifecycle_status | Not Recommended for New Designs |
| rohs_status | Compliant |
| pin_count | 3 |
| power_dissipation | 208 W |
| current_rating | 30.0 A |
| DC Collector Current | 63A |
| Collector Emitter Saturation Voltage Vce(on) | 1.8V |
| Power Dissipation Pd | 208W |
| Collector Emitter Voltage V(br)ceo | 600V |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (15-Jun-2015) |
| Operating Temperature Min | -40°C |
| Operating Temperature Range | -40°C to +150°C |
| Power Dissipation Max | 208W |
| Transistor Type | IGBT |
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