• HGTG30N60C3D
  • HGTG30N60C3D
  • HGTG30N60C3D
  • HGTG30N60C3D
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The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

polarityNPN
breakdown_voltage_collector_to_emitter600 V
voltage_rating_dc600 V
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time45.0 ns
mounting_styleThrough Hole
packagingTube
case_packageTO-247
lifecycle_statusNot Recommended for New Designs
rohs_statusCompliant
pin_count3
power_dissipation208 W
current_rating30.0 A
DC Collector Current63A
Collector Emitter Saturation Voltage Vce(on)1.8V
Power Dissipation Pd208W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-40°C
Operating Temperature Range-40°C to +150°C
Power Dissipation Max208W
Transistor TypeIGBT
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