HGTG5N120BND Купить в Москве

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HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

Вес	7.028 г
Количество в упаковке	30
DC Collector Current	21A
Collector Emitter Saturation Voltage Vce(on)	2.7V
Power Dissipation Pd	167W
Collector Emitter Voltage V(br)ceo	1.2kV
Transistor Case Style	TO-247
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
SVHC	No SVHC (15-Jun-2015)
Current Ic Continuous a Max	21A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Power Dissipation Max	167W
Termination Type	Through Hole
Transistor Polarity	N Channel
Transistor Type	No Punch Through (NPT)
Voltage Vces	1.2kV
Корпус	TO-247AD
polarity	N-Channel
breakdown_voltage_collector_to_emitter	1.20 kV
voltage_rating_dc	1.20 kV
power_dissipation	167 W
reach_svhc_compliance	No SVHC
lead_free_status	Lead Free
mounting_style	Through Hole
packaging	Tube
case_package	TO-247
lifecycle_status	Not Recommended for New Designs
rohs_status	Compliant
pin_count	3
current_rating	21.0 A