• HGTP20N60A4
  • HGTP20N60A4
  • HGTP20N60A4
  • HGTP20N60A4
  • HGTP20N60A4
  • HGTP20N60A4
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IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

polarityN-Channel
breakdown_voltage_collector_to_emitter600 V
voltage_rating_dc600 V
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time12.0 ns
mounting_styleThrough Hole
packagingTube, Rail
case_packageTO-220
lifecycle_statusNot Recommended for New Designs
rohs_statusCompliant
pin_count3
power_dissipation290 W
current_rating70.0 A
DC Collector Current70A
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd290W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic Continuous a Max70A
Current Temperature25°C
Fall Time tf32ns
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pin FormatGCE
Power Dissipation Max290W
Power Dissipation Ptot Max290W
Pulsed Current Icm280A
Rise Time12ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
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