| Срок поставки и цена – по запросу | |
The HMC452 devices are high dynamic range GaAs InGaP heterojunction bipolar transistor (HBT) 1 W monolithic microwave integrated circuit (MMIC) power amplifier operating between 0.4 GHz and 2.2 GHz. Packaged in miniature 16-lead QSOP or SOT89 packages, the amplifier gain is typically 21 dB or 22.5 dB at 400 MHz and 9 dB at 2,100 MHz. Utilizing a minimum number of components and a single 5 V supply, the amplifiers output IP3 can be optimized to 48 dBm or 49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC452 devices ideal power amplifiers for cellular/PCS/3G and fixed wireless applications. Applications Global System for Mobile Communications (GSM), general packet radio service (GPRS), and EDGE Code division multiple access (CDMA) and wideband CDMA (W-CDMA) CATV/cable modem Fixed wireless and wireless local loop (WLL)
| packaging | Cut Tape (CT) |
| lifecycle_status | Active |
| rohs_status | Compliant |
| lead_free_status | Contains Lead |
| pin_count | 16 |
