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The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers. The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package. Multifunction pin names may be referenced by their relevant function only. Applications Software defined radios Electronics warfare Radar applications
| Frequency Min | 10MHz |
| Frequency Max | 3GHz |
| Gain | 19.5dB |
| Noise Figure Typ | 1.1dB |
| RF IC Case Style | LFCSP |
| No. of Pins | 6Pins |
| Supply Voltage Min | - |
| Supply Voltage Max | - |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 85°C |
| Packaging | Cut Tape |
| Product Range | - |
| Automotive Qualification Standard | - |
| RoHS Phthalates Compliant | Yes |
| MSL | MSL 3 - 168 hours |
| SVHC | No SVHC (07-Jul-2017) |
| rohs_status | Compliant |
| lead_free_status | Contains Lead |
| packaging | Cut Tape (CT) |
| gain | 19.5 dB |
| lifecycle_status | Active |
| pin_count | 6 |
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