• HUF75332P3
  • HUF75332P3
  • HUF75332P3
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These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.

polarityN-Channel
voltage_rating_dc55.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current60.0 A
breakdown_voltage_drain_to_source55.0 V
vds_drain_to_source_voltage55.0 V
current_rating60.0 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
case_packageTO-220
rds_drain_to_source_resistance_on19.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation145 W
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