• IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
  • IRF530PBF
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

MOSFET, N, 100V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Количество в упаковке50
КорпусTO-220AB
Вес2.72 г
polarityN-Channel
voltage_rating_dc100 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current14.0 A
lead_free_statusLead Free
vds_drain_to_source_voltage100 V
current_rating14.0 A
rise_time34.0 ns
mounting_styleThrough Hole
packagingTube
rds_drain_to_source_resistance_on160 mΩ
rohs_statusCompliant
pin_count3
power_dissipation88.0 W
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