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MOSFET, DUAL, NP, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2.2A; Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; On State Resistance Channel 1:90mohm; On State Resistance P Channel 2:135mohm; Package / Case:TSOP; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:9A; Pulse Current Idm N Channel:11A; Pulse Current Idm P Channel:9A; Termination Type:SMD; Voltage Vds N Channel 1:20V; Voltage Vds P Channel 1:20V; Voltage Vds Typ:20V; Voltage Vgs Max:1.25V; Voltage Vgs Rds on Measurement:4.5V
polarity | N-Channel, P-Channel |
part_family | IRF5851 |
power_dissipation | 960 mW |
vds_drain_to_source_voltage | 20.0 V |
reach_svhc_compliance | No SVHC |
lead_free_status | Lead Free |
packaging | Cut Tape (CT) |
rohs_status | Compliant |
pin_count | 6 |
id_continuous_drain_current | 2.70 A |
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