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MOSFET, DUAL, N, TSOP-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id @ 25°C:2.7A; Cont Current Id @ 70°C:2.2; Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:11A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:1.25V; Voltage Vgs Rds on Measurement:4.5V
| polarity | N-Channel, Dual N-Channel |
| part_family | IRF5852 |
| power_dissipation | 960 mW |
| vds_drain_to_source_voltage | 20.0 V |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| rohs_status | Compliant |
| pin_count | 6 |
| id_continuous_drain_current | 2.70 A |
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