IRF6620TR1 Купить в Москве

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A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

Transistor Polarity	N Channel
Continuous Drain Current Id	150A
Drain Source Voltage Vds	20V
On Resistance Rds(on)	0.0021ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	2.45V
Power Dissipation Pd	2.8W
Transistor Case Style	DirectFET MX
No. of Pins	7Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 3 - 168 hours
SVHC	No SVHC (12-Jan-2017)
Capacitance Ciss Typ	4130pF
Charge Qrr @ Tj = 25°C Typ	13nC
Current Id Max	22A
Current Temperature	25°C
External Depth	6.35mm
External Length / Height	0.7mm
External Width	5.05mm
Full Power Rating Temperature	25°C
IC Package (Case style)	MX
Junction Temperature Tj Max	150°C
Junction Temperature Tj Min	-40°C
No. of Transistors	1
On State Resistance Max	2.7mohm
Operating Temperature Min	-40°C
Packaging	Cut Tape
Pulse Current Idm	220A
Reverse Recovery Time trr Typ	23ns
SMD Marking	6620
Voltage Vds	20V
Voltage Vds Typ	20V
Voltage Vgs Max	20V
polarity	N-Channel
voltage_rating_dc	20.0 V
part_family	IRF6620
breakdown_voltage_drain_to_source	20.0 V
vds_drain_to_source_voltage	20.0 V
current_rating	27.0 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
rise_time	80.0 ns
rds_drain_to_source_resistance_on	2.10 Ω
lifecycle_status	Pending Obsolescence
rohs_status	Non-Compliant
pin_count	7
power_dissipation	2.80 W
id_continuous_drain_current	22.0 A