• IRF6620TR1
  • IRF6620TR1
  • IRF6620TR1
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A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

Transistor PolarityN Channel
Continuous Drain Current Id150A
Drain Source Voltage Vds20V
On Resistance Rds(on)0.0021ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2.45V
Power Dissipation Pd2.8W
Transistor Case StyleDirectFET MX
No. of Pins7Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 3 - 168 hours
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ4130pF
Charge Qrr @ Tj = 25°C Typ13nC
Current Id Max22A
Current Temperature25°C
External Depth6.35mm
External Length / Height0.7mm
External Width5.05mm
Full Power Rating Temperature25°C
IC Package (Case style)MX
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-40°C
No. of Transistors1
On State Resistance Max2.7mohm
Operating Temperature Min-40°C
PackagingCut Tape
Pulse Current Idm220A
Reverse Recovery Time trr Typ23ns
SMD Marking6620
Voltage Vds20V
Voltage Vds Typ20V
Voltage Vgs Max20V
polarityN-Channel
voltage_rating_dc20.0 V
part_familyIRF6620
breakdown_voltage_drain_to_source20.0 V
vds_drain_to_source_voltage20.0 V
current_rating27.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
rise_time80.0 ns
rds_drain_to_source_resistance_on2.10 Ω
lifecycle_statusPending Obsolescence
rohs_statusNon-Compliant
pin_count7
power_dissipation2.80 W
id_continuous_drain_current22.0 A
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