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MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:24mJ; Base Number:6668; Cont Current Id @ 70°C:44A; Current Id Max:44A; Fall Time tf:23ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MZ; Power Dissipation Pd:2.8mW; Pulse Current Idm:170A; Rise Time:13ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:80V; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
| polarity | N-Channel |
| input_capacitance | 1.32 nF |
| voltage_rating_dc | 80.0 V |
| part_family | IRF6668 |
| gate_charge | 31.0 nC |
| breakdown_voltage_drain_to_source | 80.0 V |
| vds_drain_to_source_voltage | 80.0 V |
| current_rating | 55.0 A |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| rise_time | 13.0 ns |
| lifecycle_status | Active |
| rohs_status | Compliant |
| pin_count | 5 |
| power_dissipation | 2.80 mW |
| id_continuous_drain_current | 44.0 A |
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