• IRF820PBF
  • IRF820PBF
  • IRF820PBF
  • IRF820PBF
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  • IRF820PBF
  • IRF820PBF
  • IRF820PBF
  • IRF820PBF
  • IRF820PBF
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MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 3 Ohms; ID 2.5A; TO-220AB; PD 50W; VGS +/-20V

Количество в упаковке50
КорпусTO-200AB
Вес2.707 г
Transistor PolarityN Channel
Continuous Drain Current Id2.5A
Drain Source Voltage Vds500V
On Resistance Rds(on)3ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd40W
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max2.5A
Current Temperature25°C
Full Power Rating Temperature25°C
Junction to Case Thermal Resistance A2.5°C/W
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Pin Configurationa
Pin Format1 g
Pulse Current Idm10A
Termination TypeThrough Hole
Voltage Vds Typ500V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
voltage_rating_dc500 V
id_continuous_drain_current2.50 A
breakdown_voltage_drain_to_source500 V
vds_drain_to_source_voltage500 V
current_rating2.50 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rise_time8.60 ns
rohs_statusCompliant
pin_count3
power_dissipation40.0 W
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