• IRF8313PBF
  • IRF8313PBF
  • IRF8313PBF
  • IRF8313PBF
  • IRF8313PBF
  • IRF8313PBF
Срок поставки и цена – по запросу

MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

polarityN-Channel, Dual N-Channel
part_familyIRF8313
power_dissipation2.00 W
vds_drain_to_source_voltage30.0 V
lead_free_statusLead Free
mounting_styleSurface Mount
lifecycle_statusActive
rohs_statusCompliant
pin_count8
id_continuous_drain_current8.10 A
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