• IRFB11N50APBF
  • IRFB11N50APBF
  • IRFB11N50APBF
  • IRFB11N50APBF
  • IRFB11N50APBF
  • IRFB11N50APBF
  • IRFB11N50APBF
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MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ohm; ID 11A; TO-220AB; PD 170W; VGS +/-30V

Количество в упаковке50
КорпусTO-220
Вес2.664 г
Transistor PolarityN Channel
Continuous Drain Current Id11A
Drain Source Voltage Vds500V
On Resistance Rds(on)520mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd170W
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max11A
Current Temperature25°C
Full Power Rating Temperature25°C
Junction to Case Thermal Resistance A0.75°C/W
No. of Transistors1
Operating Temperature Min-55°C
Pulse Current Idm44A
Termination TypeThrough Hole
Voltage Vds Typ500V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max4V
polarityN-Channel
voltage_rating_dc500 V
id_continuous_drain_current11.0 A
breakdown_voltage_drain_to_source500 V
vds_drain_to_source_voltage500 V
current_rating11.0 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rise_time35.0 ns
rohs_statusCompliant
pin_count3
power_dissipation170 W
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