• IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
  • IRFBE30PBF
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

IRFBE30PBF, TO-220ABтранзисторы полевые импортныетранзисторы полевые импортныетранзисторы полевые импортные

Количество в упаковке50
КорпусTO-220
Вес2.714 г
Transistor PolarityN Channel
Continuous Drain Current Id4.1A
Drain Source Voltage Vds800V
On Resistance Rds(on)3ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd125W
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max4.1A
Current Temperature25°C
Full Power Rating Temperature25°C
Junction to Case Thermal Resistance A2°C/W
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm16A
Termination TypeThrough Hole
Voltage Vds Typ800V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
voltage_rating_dc800 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current4.10 A
breakdown_voltage_drain_to_source800 V
vds_drain_to_source_voltage800 V
current_rating4.10 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rise_time33.0 ns
rds_drain_to_source_resistance_on12.0 Ω
rohs_statusCompliant
pin_count3
power_dissipation125 W
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