• IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
  • IRFBG30PBF
Срок доставки – по запросу
89,12 ₽
от 1 шт.
итого  89,12 ₽

IRFBG30PBF, Nкан 1000В 3.1А TO220ABтранзисторы полевые импортныетранзисторы полевые импортныетранзисторы полевые импортные

Количество в упаковке50
КорпусTO-220
Вес2.684 г
polarityN-Channel
voltage_rating_dc1.00 kV
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current3.10 A
breakdown_voltage_drain_to_source1.00 kV
vds_drain_to_source_voltage1.00 kV
current_rating3.10 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
rise_time25.0 ns
rds_drain_to_source_resistance_on5.00 kΩ
rohs_statusCompliant
pin_count3
power_dissipation125 W
Transistor PolarityN Channel
Continuous Drain Current Id3.1A
Drain Source Voltage Vds1kV
On Resistance Rds(on)5ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd125W
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max3.1A
Current Temperature25°C
Full Power Rating Temperature25°C
Junction to Case Thermal Resistance A1°C/W
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm12A
Termination TypeThrough Hole
Voltage Vds Typ1kV
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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