IRFD110PBF Купить в Москве

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MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 1A; HD-1; PD 1.3W; VGS +/-20V; VF 2.

Количество в упаковке	100
Корпус	HD1
Вес	0.55 г
polarity	N-Channel
voltage_rating_dc	100 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	1.00 A
breakdown_voltage_drain_to_source	100 V
vds_drain_to_source_voltage	100 V
current_rating	1.00 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Through Hole
packaging	Tube
case_package	DIP
rds_drain_to_source_resistance_on	540 mΩ
rise_time	16.0 ns
rohs_status	Compliant
pin_count	4
power_dissipation	1.30 W
Transistor Polarity	N Channel
Continuous Drain Current Id	1A
Drain Source Voltage Vds	100V
On Resistance Rds(on)	540mohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	4V
Power Dissipation Pd	1.3W
Transistor Case Style	DIP
No. of Pins	4Pins
Operating Temperature Max	175°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
Current Id Max	1A
Current Temperature	25°C
Device Marking	IRFD110PBF
Full Power Rating Temperature	25°C
Junction Temperature Tj Max	150°C
Junction Temperature Tj Min	-55°C
Lead Spacing	2.54mm
No. of Transistors	1
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +175°C
Pulse Current Idm	8A
Row Pitch	7.62mm
Termination Type	Through Hole
Voltage Vds Typ	100V
Voltage Vgs Max	20V
Voltage Vgs Rds on Measurement	10V