• IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
  • IRFD110PBF
Срок поставки и цена – по запросу

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 1A; HD-1; PD 1.3W; VGS +/-20V; VF 2.

Количество в упаковке100
КорпусHD1
Вес0.55 г
polarityN-Channel
voltage_rating_dc100 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current1.00 A
breakdown_voltage_drain_to_source100 V
vds_drain_to_source_voltage100 V
current_rating1.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageDIP
rds_drain_to_source_resistance_on540 mΩ
rise_time16.0 ns
rohs_statusCompliant
pin_count4
power_dissipation1.30 W
Transistor PolarityN Channel
Continuous Drain Current Id1A
Drain Source Voltage Vds100V
On Resistance Rds(on)540mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd1.3W
Transistor Case StyleDIP
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max1A
Current Temperature25°C
Device MarkingIRFD110PBF
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Pulse Current Idm8A
Row Pitch7.62mm
Termination TypeThrough Hole
Voltage Vds Typ100V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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