• IRFD210PBF
  • IRFD210PBF
  • IRFD210PBF
  • IRFD210PBF
  • IRFD210PBF
  • IRFD210PBF
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MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5 Ohms; ID 0.6A; HD-1; PD 1W; VGS +/-20V; VF 2

Transistor PolarityN Channel
Continuous Drain Current Id600mA
Drain Source Voltage Vds200V
On Resistance Rds(on)1.5ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd1W
Transistor Case StyleDIP
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Id Max600mA
Current Temperature25°C
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm4.8A
Row Pitch7.62mm
Voltage Vds Typ200V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
voltage_rating_dc200 V
id_continuous_drain_current600 mA
breakdown_voltage_drain_to_source200 V
vds_drain_to_source_voltage200 V
current_rating600 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageDIP
rise_time17.0 ns
rohs_statusCompliant
pin_count4
power_dissipation1.00 W
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