• IRG4PF50WDPBF
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IRG4PF50WDPBF, IGBT 900В 51А 100кГц TO247ACIGBT транзисторыIGBT транзисторыIGBT транзисторы

Количество в упаковке25
КорпусTO-247AC
Вес7.04 г
polarityN-Channel
rise_time52.0 ns
lead_free_statusLead Free
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
DC Collector Current51A
Collector Emitter Saturation Voltage Vce(on)2.25V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo900V
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Ic Continuous a Max51A
Current Temperature25°C
Device MarkingIRG4PF50WDPbF
Fall Time Max190ns
Fall Time tf220ns
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max200W
Pulsed Current Icm204A
Rise Time52ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces900V
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