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IRG4PH50SPBF, IGBT 1200В 33А 1кГц ТО247АСIGBT транзисторыIGBT транзисторыIGBT транзисторы

Количество в упаковке25
КорпусTO-247AC
Вес7.204 г
DC Collector Current57A
Collector Emitter Saturation Voltage Vce(on)1.47V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
Current Ic Continuous a Max57A
Current Temperature25°C
Device MarkingIRG4PH50S
Fall Time Max638ns
Full Power Rating Temperature25°C
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max200W
Pulsed Current Icm114A
Rise Time29ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces1.2kV
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