• IRLD024PBF
  • IRLD024PBF
  • IRLD024PBF
  • IRLD024PBF
  • IRLD024PBF
  • IRLD024PBF
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IRLD024PBF, MOSFET транзистортранзисторы полевые импортныетранзисторы полевые импортныетранзисторы полевые импортные

Количество в упаковке100
КорпусHD1
Вес0.595 г
polarityN-Channel
voltage_rating_dc60.0 V
id_continuous_drain_current2.50 A
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating2.50 A
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
case_packageDIP
rise_time110 ns
rohs_statusCompliant
pin_count4
power_dissipation1.00 W
Transistor PolarityN Channel
Continuous Drain Current Id2.5A
Drain Source Voltage Vds60V
On Resistance Rds(on)100mohm
Rds(on) Test Voltage Vgs5V
Threshold Voltage Vgs2V
Power Dissipation Pd1W
Transistor Case StyleDIP
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (07-Jul-2017)
Current Id Max2.5A
Current Temperature25°C
Device MarkingIRLD024PBF
Full Power Rating Temperature25°C
Junction Temperature Tj Max150°C
Junction Temperature Tj Min-55°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Pulse Current Idm20A
Row Pitch7.62mm
Voltage Vds Typ60V
Voltage Vgs Max10V
Voltage Vgs Rds on Measurement5V
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