• IXDR30N120
  • IXDR30N120
  • IXDR30N120
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IGBT, ISOPLUS247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ISOPLUS-247; No. of Pins:3; Current Ic Continuous a Max:50A; Fall Time tf:70ns; Junction to Case Thermal Resistance A:0.6°C/W; Operating Temperature Range:-55°C to +150°C; Package / Case:ISOPLUS-247; Pin Configuration:Single; Power Dissipation Max:200W; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

polarityN-Channel
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time70.0 ns
mounting_styleThrough Hole
packagingTube
rohs_statusCompliant
pin_count3
power_dissipation200 W
DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.4V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Current Ic Continuous a Max50A
Fall Time tf70ns
Junction to Case Thermal Resistance A0.6°C/W
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pin ConfigurationSingle
Power Dissipation Max200W
Rise Time70ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces1.2kV
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