• IXFC110N10P
  • IXFC110N10P
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MOSFET, N, ISOPLUS220; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:120W; Transistor Case Style:ISOPLUS-220; No. of Pins:3; Capacitance Ciss Typ:3550pF; Isolation Voltage:2.5kV; N-channel Gate Charge:110nC; Package / Case:ISOPLUS-220; Power Dissipation Pd:120W; Reverse Recovery Time trr Max:150ns; Rth:1.25; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current60.0 A
reach_svhc_complianceNo SVHC
rohs_statusCompliant
mounting_styleThrough Hole
isolation_voltage2.50 kV
packagingBulk
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds100V
On Resistance Rds(on)17mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd120W
Transistor Case StyleISOPLUS-220
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ3550pF
Isolation Voltage2.5kV
N-channel Gate Charge110nC
Operating Temperature Min-55°C
Reverse Recovery Time trr Max150ns
Rth1.25
Termination TypeThrough Hole
Voltage Vds Typ100V
Voltage Vgs Rds on Measurement10V
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