• IXFH6N100F
  • IXFH6N100F
  • IXFH6N100F
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MOSFET, N, RF, TO-247AD; Transistor Type:RF MOSFET; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:6A; Power Dissipation Pd:180W; Operating Frequency Range:-; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; RF Transistor Case:TO-247AD; No. of Pins:3; Capacitance Ciss Typ:1870pF; On Resistance Rds(on):1.9ohm; Operating Temperature Range:-55°C to +150°C; Package / Case:TO-247AD; Power Dissipation Max:180W; Power Dissipation Pd:180W; Rise Time:14ns; Termination Type:Through Hole; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-247AD; Transistor Polarity:N Channel; Voltage Vds Typ:1kV; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current6.00 A
rohs_statusCompliant
reach_svhc_complianceNo SVHC
rise_time14.0 ns
mounting_styleThrough Hole
packagingTube
pin_count3
Drain Source Voltage Vds1kV
Continuous Drain Current Id6A
Power Dissipation Pd180W
Operating Frequency Min-
Operating Frequency Max500kHz
RF Transistor CaseTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ1870pF
On Resistance Rds(on)1.9ohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max180W
Rise Time14ns
Termination TypeThrough Hole
Threshold Voltage Vgs5V
Transistor Case StyleTO-247AD
Transistor PolarityN Channel
Transistor TypeRF MOSFET
Voltage Vds Typ1kV
Voltage Vgs Rds on Measurement10V
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