• IXFK32N80P
  • IXFK32N80P
  • IXFK32N80P
  • IXFK32N80P
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MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:800V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:830W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-264; No. of Pins:3; Capacitance Ciss Typ:8800pF; Current Id Max:32A; Junction to Case Thermal Resistance A:0.15°C/W; N-channel Gate Charge:150nC; Package / Case:TO-264; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current32.0 A
power_dissipation830 W
reach_svhc_complianceNo SVHC
rohs_statusCompliant
mounting_styleThrough Hole
packagingTube
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id32A
Drain Source Voltage Vds800V
On Resistance Rds(on)270mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd830W
Transistor Case StyleTO-264
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ8800pF
Current Id Max32A
Junction to Case Thermal Resistance A0.15°C/W
N-channel Gate Charge150nC
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Reverse Recovery Time trr Max250ns
Termination TypeThrough Hole
Voltage Vds Typ800V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
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