• IXFK64N60P
  • IXFK64N60P
  • IXFK64N60P
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MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:600V; On Resistance Rds(on):96mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:1.04kW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-264; No. of Pins:3; Capacitance Ciss Typ:12000pF; Current Id Max:64A; Junction to Case Thermal Resistance A:0.12°C/W; N-channel Gate Charge:200nC; Package / Case:TO-264; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
input_capacitance1.15 nF
voltage_rating_dc600 V
id_continuous_drain_current64.0 A
gate_charge200 nC
breakdown_voltage_drain_to_source600 V
vds_drain_to_source_voltage600 V
current_rating64.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageTO-264
rds_drain_to_source_resistance_on96.0 mΩ
rohs_statusCompliant
pin_count3
power_dissipation1.04 kW
Transistor PolarityN Channel
Continuous Drain Current Id64A
Drain Source Voltage Vds600V
On Resistance Rds(on)96mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd1.04kW
Transistor Case StyleTO-264
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ12000pF
Current Id Max64A
Junction to Case Thermal Resistance A0.12°C/W
N-channel Gate Charge200nC
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Reverse Recovery Time trr Max200ns
Termination TypeThrough Hole
Voltage Vds Typ600V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
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