• IXFN24N100F
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MOSFET, N, RF, SOT-227B; Transistor Type:RF MOSFET; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:24A; Power Dissipation Pd:600W; Operating Frequency Range:-; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; RF Transistor Case:SOT-227B; No. of Pins:4; Capacitance Ciss Typ:6600pF; On Resistance Rds(on):390mohm; Operating Temperature Range:-55°C to +150°C; Package / Case:ISOTOP; Power Dissipation Max:600W; Power Dissipation Pd:600W; Rise Time:18ns; Termination Type:Screw; Threshold Voltage Vgs Typ:5.5V; Transistor Case Style:ISOTOP; Transistor Polarity:N Channel; Voltage Vds Typ:1kV; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
rohs_statusCompliant
reach_svhc_complianceNo SVHC
rise_time18.0 ns
mounting_styleSurface Mount
packagingTube
case_packageSOT-227
pin_count4
Drain Source Voltage Vds1kV
Continuous Drain Current Id24A
Power Dissipation Pd600W
Operating Frequency Min-
Operating Frequency Max500kHz
RF Transistor CaseSOT-227B
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ6600pF
On Resistance Rds(on)390mohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max600W
Rise Time18ns
Termination TypeScrew
Threshold Voltage Vgs5.5V
Transistor Case StyleISOTOP
Transistor PolarityN Channel
Transistor TypeRF MOSFET
Voltage Vds Typ1kV
Voltage Vgs Rds on Measurement10V
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