IXFN55N50

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:500V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:600W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ISOTOP; No. of Pins:3; Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:80mohm; Operating Temperature Range:-55°C to +150°C; Package / Case:ISOTOP; Power Dissipation Pd:600W; Power Dissipation Pd:600W; Pulse Current Idm:220A; Repetitive Avalanche Energy Max:60mJ; Termination Type:Screw; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:0.046kg