• IXFP3N120
  • IXFP3N120
  • IXFP3N120
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MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:120V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Capacitance Ciss Typ:1050pF; Current Id Max:3A; Junction to Case Thermal Resistance A:0.62°C/W; N-channel Gate Charge:39nC; Package / Case:TO-220; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:1.2kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current3.00 A
power_dissipation200 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rohs_statusCompliant
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id3A
Drain Source Voltage Vds120V
On Resistance Rds(on)4.5ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd200W
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ1050pF
Current Id Max3A
Junction to Case Thermal Resistance A0.62°C/W
N-channel Gate Charge39nC
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Reverse Recovery Time trr Max250ns
Termination TypeThrough Hole
Voltage Vds Typ1.2kV
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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