• IXFP4N100Q
  • IXFP4N100Q
  • IXFP4N100Q
  • IXFP4N100Q
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MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; Capacitance Ciss Typ:1050pF; Current Id Max:4A; Junction to Case Thermal Resistance A:0.8°C/W; N-channel Gate Charge:39nC; Operating Temperature Range:-55°C to +150°C; Package / Case:TO-220; Power Dissipation Pd:150W; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current4.00 A
power_dissipation150 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds1kV
On Resistance Rds(on)3ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd156W
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ1050pF
Current Id Max4A
Junction to Case Thermal Resistance A0.8°C/W
N-channel Gate Charge39nC
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Reverse Recovery Time trr Max250ns
Termination TypeThrough Hole
Voltage Vds Typ1kV
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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