• IXGF32N170
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IGBT, ISOI4-PAC; Transistor Type:IGBT; DC Collector Current:44A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ISOPLUS i4-PAC; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Current Ic Continuous a Max:26A; Junction to Case Thermal Resistance A:0.65°C/W; Operating Temperature Range:-55°C to +150°C; Pin Configuration:Single; Power Dissipation Max:200W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1700V

polarityN-Channel
rohs_statusCompliant
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
pin_count3
DC Collector Current44A
Collector Emitter Saturation Voltage Vce(on)3.5V
Power Dissipation Pd200W
Collector Emitter Voltage V(br)ceo1.7kV
Transistor Case StyleISOPLUS i4-PAC
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Current Ic Continuous a Max26A
Junction to Case Thermal Resistance A0.65°C/W
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pin ConfigurationSingle
Power Dissipation Max200W
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces1700V
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