• IXTK200N10P
  • IXTK200N10P
  • IXTK200N10P
  • IXTK200N10P
  • IXTK200N10P
  • IXTK200N10P
  • IXTK200N10P
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MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:800W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-264; No. of Pins:3; Capacitance Ciss Typ:7600pF; Current Id Max:200A; Junction to Case Thermal Resistance A:0.18°C/W; N-channel Gate Charge:240nC; Package / Case:TO-264; Reverse Recovery Time trr Max:100ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current200 A
power_dissipation800 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds100V
On Resistance Rds(on)7.5mohm
Rds(on) Test Voltage Vgs15V
Threshold Voltage Vgs5V
Power Dissipation Pd800W
Transistor Case StyleTO-264
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ7600pF
Current Id Max200A
Junction to Case Thermal Resistance A0.18°C/W
N-channel Gate Charge240nC
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Reverse Recovery Time trr Max100ns
Termination TypeThrough Hole
Voltage Vds Typ100V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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