• IXTQ100N25P
  • IXTQ100N25P
  • IXTQ100N25P
  • IXTQ100N25P
  • IXTQ100N25P
  • IXTQ100N25P
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MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:250V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:600W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; Capacitance Ciss Typ:6300pF; Current Id Max:100A; Junction to Case Thermal Resistance A:0.21°C/W; N-channel Gate Charge:185nC; Package / Case:TO-3P; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current100 A
power_dissipation600 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rohs_statusCompliant
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds250V
On Resistance Rds(on)27mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs5V
Power Dissipation Pd600W
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ6300pF
Current Id Max100A
Junction to Case Thermal Resistance A0.21°C/W
N-channel Gate Charge185nC
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Reverse Recovery Time trr Max200ns
Termination TypeThrough Hole
Voltage Vds Typ250V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
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