• IXZ308N120
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MOSFET, N, RF, DE375; Transistor Type:RF MOSFET; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:8A; Power Dissipation Pd:880W; Operating Frequency Range:-; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; RF Transistor Case:DE375; No. of Pins:6; Capacitance Ciss Typ:1960pF; On Resistance Rds(on):2.1ohm; Operating Temperature Range:-55°C to +175°C; Package / Case:DE-375; Power Dissipation Max:880W; Power Dissipation Pd:880W; Rise Time:5ns; Threshold Voltage Vgs Typ:6.5V; Transistor Case Style:DE-375; Transistor Polarity:N Channel; Voltage Vds Typ:1.2kV; Voltage Vgs Rds on Measurement:20V

polarityN-Channel
id_continuous_drain_current8.00 A
rohs_statusCompliant
reach_svhc_complianceNo SVHC
rise_time5.00 ns
pin_count6
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id8A
Power Dissipation Pd880W
Operating Frequency Min-
Operating Frequency Max-
RF Transistor CaseDE-375
No. of Pins6Pins
Operating Temperature Max175°C
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Capacitance Ciss Typ1960pF
On Resistance Rds(on)2.1ohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Power Dissipation Max880W
Rise Time5ns
Threshold Voltage Vgs6.5V
Transistor Case StyleDE-375
Transistor PolarityN Channel
Transistor TypeRF MOSFET
Voltage Vds Typ1.2kV
Voltage Vgs Rds on Measurement20V
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