• J111
  • J111
  • J111
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TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:35V; Zero Gate Voltage Drain Current Idss:20mA; Gate-Source Cutoff Voltage Vgs(off) Max:10V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Idss Min:20mA; Current Ig:50mA; Drain Source Voltage Vds:35V; No. of Transistors:1; Package / Case:TO-92; Pin Format:m; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel

polarityN-Channel
voltage_rating_dc35.0 V
id_continuous_drain_current20.0 mA
power_dissipation625 mW
vds_drain_to_source_voltage35.0 V
current_rating50.0 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingBulk
case_packageTO-92
rds_drain_to_source_resistance_on30.0 Ω
lifecycle_statusActive
rohs_statusCompliant
pin_count3
breakdown_voltage-35.0 V
Drain Source Voltage Vds35V
Continuous Drain Current Id-
Power Dissipation Pd625mW
Operating Frequency Min-
Operating Frequency Max-
RF Transistor CaseTO-92
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Breakdown Voltage Vbr35V
Current Idss Min20mA
Current Ig50mA
Device MarkingJ111
Gate-Source Cutoff Voltage Vgs(off) Max35V
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Termination TypeThrough Hole
Transistor Case StyleTO-92
Transistor PolarityN Channel
Transistor TypeJFET
Zero Gate Voltage Drain Current Idss Min20mA
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