• MJD112G
  • MJD112G
  • MJD112G
  • MJD112G
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1.75W; DC Collector Current:2A; DC Current Gain hFE:12000; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:2V; Complementary Device:MJD117G; Continuous Collector Current Ic Max:2A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Gain Bandwidth ft Typ:25MHz; Hfe Min:200; Package / Case:D-PAK; Peak Current Icm:4A; Power Dissipation Pd:1.75W; Power Dissipation Ptot Max:20W; Termination Type:SMD; Voltage Vcbo:100V

Количество в упаковке75
КорпусDPAK-2
Вес0.613 г
polarityNPN
breakdown_voltage_collector_to_emitter100 V
voltage_rating_dc100 V
power_dissipation1.75 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
halogen_free_statusHalogen Free
mounting_styleSurface Mount
packagingTube
case_packageDPAK
lifecycle_statusActive
rohs_statusCompliant
pin_count3
current_rating2.00 A
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Transition Frequency ft25MHz
Power Dissipation Pd1.75W
DC Collector Current2A
DC Current Gain hFE12000hFE
Transistor Case StyleTO-252
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Collector Emitter Saturation Voltage Vce(on)2V
Complementary DeviceMJD117G
Continuous Collector Current Ic Max2A
Current Ic Continuous a Max4A
Current Ic hFE2A
Gain Bandwidth ft Typ25MHz
Hfe Min200
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +150°C
Peak Current Icm4A
Power Dissipation Ptot Max20W
Termination TypeSurface Mount Device
Voltage Vcbo100V
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