• MJD210G
  • MJD210G
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TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency Typ ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:5A; DC Current Gain hFE:3; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Complementary Device:MJD200G; Continuous Collector Current Ic Max:5A; Current Ic Continuous a Max:5A; Current Ic hFE:5A; Gain Bandwidth ft Typ:65MHz; Hfe Min:10; Package / Case:D-PAK; Peak Current Icm:10A; Power Dissipation Pd:1.4W; Power Dissipation Ptot Max:12.5W; Termination Type:SMD; Voltage Vcbo:40V

polarityPNP, P-Channel
breakdown_voltage_collector_to_emitter-25.0 V
voltage_rating_dc-25.0 V
power_dissipation1.40 W
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTube
lifecycle_statusActive
rohs_statusCompliant
pin_count3
current_rating-5.00 A
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo25V
Transition Frequency ft65MHz
Power Dissipation Pd1.4W
DC Collector Current5A
DC Current Gain hFE3hFE
Transistor Case StyleTO-252
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Collector Emitter Saturation Voltage Vce(on)300mV
Complementary DeviceMJD200G
Continuous Collector Current Ic Max5A
Current Ic Continuous a Max5A
Current Ic hFE5A
Gain Bandwidth ft Typ65MHz
Hfe Min10
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +150°C
Peak Current Icm10A
Power Dissipation Ptot Max12.5W
Termination TypeSurface Mount Device
Voltage Vcbo40V
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