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TRANSISTOR, NPN, D-PAK; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:3A; Voltage, Vce Sat Max:1.2V; Power Dissipation:1.56W; Min Hfe:10; ft, Typ:3MHz; Case Style:D-PAK; Termination Type:SMD; Application Code:PGP; Current Ic Max:3A; Current Ic hFE:1A; External Depth:10.28mm; External Length / Height:2.38mm; Power, Ptot:15W; SMD Marking:MJD31C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vcbo:100V; Width, External:6.73mm; ft, Min:3MHz
Transistor Polarity | NPN |
Collector Emitter Voltage V(br)ceo | 100V |
Transition Frequency ft | 3MHz |
Power Dissipation Pd | 15W |
DC Collector Current | 3A |
DC Current Gain hFE | 10hFE |
Transistor Case Style | TO-252 |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (07-Jul-2017) |
Application Code | PGP |
Collector Emitter Saturation Voltage Vce(on) | 1.2V |
Continuous Collector Current Ic Max | 3A |
Current Ic Continuous a Max | 3A |
Current Ic hFE | 1A |
External Depth | 10.28mm |
External Length / Height | 2.38mm |
External Width | 6.73mm |
Full Power Rating Temperature | 25°C |
Gain Bandwidth ft Min | 3MHz |
Gain Bandwidth ft Typ | 3MHz |
Hfe Min | 10 |
No. of Transistors | 1 |
Operating Temperature Min | -65°C |
Power Dissipation Ptot Max | 15W |
SMD Marking | MJD31C |
Voltage Vcbo | 100V |
Количество в упаковке | 75 |
Корпус | DPAK-2 |
Вес | 0.607 г |
polarity | NPN |
breakdown_voltage_collector_to_emitter | 100 V |
voltage_rating_dc | 100 V |
power_dissipation | 1.56 W |
reach_svhc_compliance | No SVHC |
lead_free_status | Lead Free |
mounting_style | Surface Mount |
packaging | Tube |
lifecycle_status | Active |
rohs_status | Compliant |
pin_count | 3 |
current_rating | 3.00 A |
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