• MJD44H11T4
  • MJD44H11T4
  • MJD44H11T4
  • MJD44H11T4
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TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; Case Style:TO-252; Max Current Ic Continuous a:8A; Max Voltage Vce Sat:1V; Min Hfe:60; Power Dissipation:20W; Termination Type:SMD; Transistor Type:Power

polarityNPN, N-Channel
reach_svhc_complianceNo SVHC
voltage_rating_dc80.0 V
power_dissipation20.0 W
current_rating8.00 A
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageTO-252
lifecycle_statusActive
rohs_statusCompliant
pin_count3
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Transition Frequency ft-
Power Dissipation Pd20W
DC Collector Current8A
DC Current Gain hFE60hFE
Transistor Case StyleTO-252
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
Collector Emitter Saturation Voltage Vce(on)1V
Current Ic Continuous a Max8A
Hfe Min60
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Transistor TypePower
Количество в упаковке2500
КорпусDPAK
Вес0.329 г
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