• MMBF170
  • MMBF170
  • MMBF170
  • MMBF170
  • MMBF170
  • MMBF170
  • MMBF170
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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

polarityN-Channel
input_capacitance40.0 pF
voltage_rating_dc60.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current500 mA
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating500 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23
rds_drain_to_source_resistance_on5.00 Ω
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation300 mW
Transistor PolarityN Channel
Continuous Drain Current Id500mA
Drain Source Voltage Vds60V
On Resistance Rds(on)5ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs2.1V
Power Dissipation Pd300mW
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Temperature25°C
Device MarkingMMBF170
External Depth2.5mm
External Length / Height1.12mm
External Width3.05mm
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm800mA
SMD MarkingMMBF170
Tape Width8mm
Voltage Vds Typ60V
Voltage Vgs Max2.1V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max3V
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